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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Package outlines  
11  
Package outlines  
1)  
8.65±0.1  
1)  
3.9±0.1  
D
0.1  
0.1  
2x  
2x  
0.67±0.25  
6±0.2  
C
0.08 C  
24x  
SEATING COPLANARITY  
PLANE  
0.2 D  
24x  
2)  
0.25±0.05  
0.25  
A
A-B C  
24x  
BOTTOM VIEW  
D
0.15  
24  
13  
13  
24  
1
12  
12  
1
INDEX  
MARKING  
6.4±0.1  
B
0.15  
A-B  
0.65  
1) DOES NOT INCLUDE PLASTIC OR METAL PROTRUSION OF 0.15 MAX. PER SIDE  
2) DAMBAR PROTUSION SHALL BE MAXIMUM 0.1MM TOTAL IN EXCESS OF LEAD WIDTH  
ALL DIMENSIONS ARE IN UNITS MM  
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [  
]
Figure 30  
PG-TSDSO-24 (Plastic dual small outline package)(RoHS-compliant)  
Green product (RoHS compliant)  
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with  
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-  
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).  
Legal disclaimer for short-circuit capability  
Infineon disclaims any warranties and liablilities, whether expressed or implied, for any short-circuit failures  
below the threshold limit.  
Datasheet  
49  
Rev. 1.00  
2019-03-09  
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