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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Application information  
Table 12  
Bill of material (continued)  
Reference  
Value  
Purpose  
RPD  
47 kΩ  
Polarization of the output for short circuit to VS detection. Improve  
BTT6200-4ESA immunity to electromagnetic noise  
ROL  
1.5 kΩ  
1.2 kΩ  
10 kΩ  
Polarization of the output during open load in OFF detection  
Sense resistor  
RIS  
RSENSE  
Overvoltage, reverse polarity, loss of ground. Value to be tuned with  
microcontroller specification.  
CSENSE  
COUT  
RLED  
RGND  
D
100 pF  
10 nF  
680 Ω  
27 Ω  
Sense signal filtering  
Protection of the device during ESD and BCI  
Overvoltage protection of the LED. Value to be tuned with LED specification  
Protection of the BTT6200-4ESA during overvoltage  
Protection of the BTT6200-4ESA during reverse polarity  
Protection of the device during overvoltage  
BAS21  
Z
58 V Zener  
diode  
CVS  
T1  
100 nF  
Filtering of voltage spikes at the battery line  
Dual NPN/PNP Switch the battery voltage for open load in OFF diagnostic  
10.1  
Further application information  
Please contact us to get the pin FMEA  
Existing App. Notes  
For further information you may visit www.infineon.com  
Datasheet  
48  
Rev. 1.00  
2019-03-09  
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