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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Application information  
10  
Application information  
Note:  
The following information is given as a hint for the implementation of the device only and shall not be  
regarded as a description or warranty of a certain functionality, condition or quality of the device.  
VBAT  
Voltage Regulator  
OUT  
VS  
GND  
T1  
Z
CVDD  
CVS  
VDD  
VS  
RDEN  
I/O  
DEN  
OUT0  
OUT1  
COUT  
Relay  
I/O  
I/O  
RDSEL  
DSEL0  
DSEL1  
86  
85  
30  
87  
RDSEL  
COUT  
RIN  
RIN  
RIN  
RIN  
I/O  
I/O  
I/O  
I/O  
IN0  
IN1  
IN2  
IN3  
Micro  
controller  
+
-
OUT2  
OUT3  
COUT  
E.C.U.  
OT3  
OUT4  
COUT  
RSENSE  
IS  
A/D  
GND  
LED  
R5W  
GND  
CSENSE  
D
Page-1  
Figure 29  
Application diagram with BTT6200-4ESA  
Note:  
This is a very simplified example of an application circuit. The function must be verified in the real  
application.  
Table 12  
Bill of material  
Reference  
Value  
Purpose  
RIN  
10 kΩ  
Protection of the microcontroller during overvoltage, reverse polarity  
Guarantee BTT6200-4ESA channels OFF during loss of ground  
RDSEL  
RDEN  
10 kΩ  
10 kΩ  
Protection of the microcontroller during overvoltage, reverse polarity  
Protection of the microcontroller during overvoltage, reverse polarity  
Datasheet  
47  
Rev. 1.00  
2019-03-09  
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