BTT6200-4ESA 参数 Datasheet PDF下载

型号：	BTT6200-4ESA
PDF下载：	下载PDF文件查看货源
内容描述：	[The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用：
文件页数/大小：	51 页 / 1248 K
品牌：	INFINEON [ Infineon ]

™

PROFET + 24V

BTT6200-4ESA

Characterization results

9.5

Input pins

P_8.4.1

P_8.4.2

Input voltage threshold V_IN(L)= f(T_J;V_S)

Input voltage threshold V_IN(H)= f(T_J;V_S)

1.340

1.320

1.300

1.280

1.260

1.240

1.530

1.520

1.510

1.500

1.490

[V]

1.220

1.480

1.470

1.200

1.180

1.160

1.140

1.120

1.460

1.450

28V

36V

28V

36V

-50

-25

100

125

150

-50

-25

100

125

150

Temperature [°C]

P_8.4.3

P_8.4.5

Input voltage hysteresis V_IN(HYS)= f(T_J;V_S)

Input current high level I_IN(H)= f(T_J;V_S)

350.000

16.000

14.000

12.000

10.000

300.000

250.000

200.000

8.000

[µA]

[mV]

150.000

6.000

4.000

2.000

0.000

100.000

50.000

28V

36V

28V

36V

0.000

-50

-25

100

125

150

-50

-25

100

125

150

Temperature [°C]

Datasheet

Rev. 1.00

2019-03-09

电子百科

产品导航

BTT6200-4ESA 参数 Datasheet PDF下载

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