BTT6200-4ESA 参数 Datasheet PDF下载

型号：	BTT6200-4ESA
PDF下载：	下载PDF文件查看货源
内容描述：	[The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用：
文件页数/大小：	51 页 / 1248 K
品牌：	INFINEON [ Infineon ]

™

PROFET + 24V

BTT6200-4ESA

Characterization results

9.4

Diagnostic mechanism

P_7.5.2

Current sense at no loadI_IS= f(T_J; V_S)I_L= 0

Open load detection ON state threshold I_L(OL)= f(T_J)

1.400

11.000

10.500

10.000

9.500

1.200

1.000

0.800

9.000

[mA]

[µA]

0.600

8.500

0.400

0.200

0.000

8.000

7.500

7.000

28V

36V

28V

36V

-50

-25

100

125

150

-50

-25

100

125

150

Temperature [°C]

P_7.5.3

P_7.5.7

Sense signal at maximum voltageV_IS(AZ)= f(T_J; V_S)

Sense signal maximum current in fault condition

I_IS(FAULT)= f(T_J;V_S)

75.000

74.000

73.000

72.000

71.000

20.000

18.000

16.000

14.000

12.000

10.000

70.000

[V]

[mA]

8.000

6.000

69.000

68.000

4.000

67.000

28V

2.000

66.000

36V

0.000

65.000

-50

-25

100

125

150

-50

-25

100

125

150

Temperature [°C]

Datasheet

Rev. 1.00

2019-03-09

电子百科

产品导航

BTT6200-4ESA 参数 Datasheet PDF下载

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