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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Characterization results  
9.3  
Protection functions  
P_6.6.4  
Overload condition in the low voltage area IL5(SC)  
=
f(TJ; VS)  
12.000  
10.000  
8.000  
6.000  
[A]  
4.000  
2.000  
0.000  
8V  
28V  
36V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature [°C]  
Datasheet  
44  
Rev. 1.00  
2019-03-09  
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