BTT6200-4ESA 参数 Datasheet PDF下载

型号：	BTT6200-4ESA
PDF下载：	下载PDF文件查看货源
内容描述：	[The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用：
文件页数/大小：	51 页 / 1248 K
品牌：	INFINEON [ Infineon ]

™

PROFET + 24V

BTT6200-4ESA

Characterization results

P_5.5.14

P_5.5.15

Turn ONt_ON= f(T_J; V_S) = R_L= 47 Ω

Turn OFF t_OFF= f(T_J; V_S) = R_L= 47 Ω

80.000

90.000

80.000

70.000

60.000

50.000

70.000

60.000

50.000

40.000

[µs]

40.000

[ms]

30.000

20.000

10.000

0.000

30.000

20.000

10.000

0.000

28V

36V

28V

36V

-50

-25

100

125

150

-50

-25

100

125

150

Temperature [°C]

P_5.5.19

P_5.5.20

Switch ON energy E_ON= f(T_J; V_S) = R_L= 47 Ω

Switch OFF energy E_OFF= f(T_J; V_S) = R_L= 47 Ω

2.50E-04

3.00E-04

2.50E-04

2.00E-04

1.50E-04

[µJ]

1.00E-04

5.00E-05

0.00E+00

28V

36V

28V

36V

0.00E+00

-50

-25

100

125

150

-50

-25

100

125

150

Temperature [°C]

Datasheet

Rev. 1.00

2019-03-09

电子百科

产品导航

BTT6200-4ESA 参数 Datasheet PDF下载

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