BTT6200-4ESA 参数 Datasheet PDF下载

型号：	BTT6200-4ESA
PDF下载：	下载PDF文件查看货源
内容描述：	[The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用：
文件页数/大小：	51 页 / 1248 K
品牌：	INFINEON [ Infineon ]

™

PROFET + 24V

BTT6200-4ESA

Characterization results

9.2

Power stage

P_5.5.4

P_5.5.5

Output voltage drop limitation at low load current: Drain to source clamp voltage V_DS(AZ)= f(T_J)

V_DS(NL)= f(T_J) and V_DS(NL)= f(V_S)

12.000

11.500

11.000

10.500

10.000

9.500

75.000

74.000

73.000

72.000

71.000

70.000

[V]

[mV]

69.000

68.000

67.000

66.000

65.000

9.000

8.500

8.000

7.500

7.000

28V

36V

28V

36V

-50

-25

100

125

150

-50

-25

100

125

150

Temperature [°C]

P_5.5.11

P_5.5.12

Slew rate at turn ON dV / dt_ON= f(T_J; V_S) = R_L= 47 Ω

Slew rate at turn OFF-dV / dt_OFF= f(T_J; V_S) = R_L= 47 Ω

1.000

0.900

0.800

0.700

0.600

1.000

0.900

0.800

0.700

0.600

0.500

[V/µs]

0.500

[V/µs]

0.400

0.300

0.200

28V

0.100

36V

0.000

-50

-25

100

125

150

-50

-25

100

125

150

Temperature [°C]

Datasheet

Rev. 1.00

2019-03-09

电子百科

产品导航

BTT6200-4ESA 参数 Datasheet PDF下载

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