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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Characterization results  
9
Characterization results  
The characterization has been performed on 3 lots, with 3 devices each. Characterization has been performed at  
8 V, 28 V and 36 V overtemperature range.  
9.1  
General product characteristics  
P_4.2.3  
P_4.2.4  
Minimum functional supply voltage VS(OP)_MIN = f(TJ) Undervoltage threshold VS(UV) = f(TJ)  
5.000  
4.900  
4.800  
4.700  
4.600  
4.500  
4.000  
3.900  
3.800  
3.700  
3.600  
3.500  
[V]  
[V]  
3.400  
3.300  
3.200  
3.100  
3.000  
4.400  
4.300  
4.200  
4.100  
4.000  
8V  
8V  
28V  
36V  
28V  
36V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature [°C]  
Temperature [°C]  
P_4.2.6  
P_4.2.7, P_4.2.10  
Current consumption for whole device with load -  
all channels active IGND_2 = f(TJ; VS)  
Standby current for whole device with load IS(OFF)  
f(TJ; VS)  
=
7.000  
6.000  
5.000  
4.000  
4.000  
3.500  
3.000  
2.500  
2.000  
[µA]  
[mA]  
3.000  
1.500  
2.000  
1.000  
8V  
8V  
1.000  
0.500  
0.000  
28V  
36V  
28V  
36V  
0.000  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature [°C]  
Temperature [°C]  
Datasheet  
41  
Rev. 1.00  
2019-03-09  
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