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BTT6200-4ESA 参数 Datasheet PDF下载

BTT6200-4ESA图片预览
型号: BTT6200-4ESA
PDF下载: 下载PDF文件 查看货源
内容描述: [The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is specially designed to drive lamps up to R10 W 24 V or R5 W 12 V, as well as LEDs in the harsh automotive environment.]
分类和应用:
文件页数/大小: 51 页 / 1248 K
品牌: INFINEON [ Infineon ]
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PROFET + 24V  
BTT6200-4ESA  
Diagnostic functions  
Vbat  
VS  
IIS(FAULT)  
VBAT  
OL  
comp.  
IS  
OUT  
GND  
ZGND  
VOL(OFF)  
RSC_VS  
RIS  
Short circuit to Vs.vsd  
Figure 27  
Short circuit to battery detection in OFF electrical equivalent circuit  
7.3.5  
SENSE signal in case of overload  
An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or  
the absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the  
thermal shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details.  
In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected.  
The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic  
temperature condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If  
the DEN pin is activated, and DSEL pin is selected to the correct channel, the SENSE follows the output stage. If  
no reset of the latch occurs, the device remains in the latching phase and IIS(FAULT) at the IS pin, even though the  
DMOS is OFF.  
7.3.6  
SENSE signal in case of inverse current  
In the case of inverse current, the sense signal of the affected channel will indicate open load in OFF state and  
indicate open load in ON state. The unaffected channels indicate normal behavior as long as the IINV current  
does not exceed the maximum value specified in Chapter 5.4.  
Datasheet  
34  
Rev. 1.00  
2019-03-09  
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