PROFET®
BTS721L1
Smart Four Channel Highside Power Switch
Features
•
Overload protection
•
Current limitation
•
Short-circuit protection
•
Thermal shutdown
•
Overvoltage protection
(including load dump)
•
Fast demagnetization of inductive loads
•
Reverse battery protection
1)
•
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
•
Open drain diagnostic output
•
Open load detection in ON-state
•
CMOS compatible input
•
Loss of ground and loss of V
bb
protection
•
Electrostatic discharge
(ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance
R
ON
Nominal load current
I
L(NOM)
Current limitation
I
L(SCr)
V
bb(AZ)
43
V
V
bb(on)
5.0 ... 34
V
two parallel four parallel
one
100
50
25
mΩ
2.9
4.3
6.3
A
8
8
8
A
Application
• µC
compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
•
All types of resistive, inductive and capacitive loads
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
®
technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
Symbol Function
Positive power supply voltage.
Design the
V
bb
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
IN1
Input 1 .. 4,
activates channel 1 .. 4 in case of
IN2
logic high signal
IN3
IN4
OUT1
Output 1 .. 4,
protected high-side power output
OUT2
of channel 1 .. 4. Design the wiring for the
OUT3
max. short circuit current
OUT4
ST1/2
Diagnostic feedback 1/2
of channel 1 and
channel 2, open drain, low on failure
ST3/4
Diagnostic feedback 3/4
of channel 3 and
channel 4, open drain, low on failure
GND1/2
Ground 1/2
of chip 1 (channel 1 and channel 2)
GND3/4
Ground 3/4
of chip 2 (channel 3 and channel 4)
Pin configuration
(top view)
V
bb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
V
bb
1
2
3
4
5
6
7
8
9
10
•
20
19
18
17
16
15
14
13
12
11
V
bb
V
bb
OUT1
OUT2
V
bb
V
bb
OUT3
OUT4
V
bb
V
bb
1
)
With external current limit (e.g. resistor R
GND
=150
Ω)
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
06.96
INFINEON [ INFINEON TECHNOLOGIES AG ]
