Smart High-Side Power Switch
BTS5210L
Inductive load switch-off energy
GND disconnect with GND pull up
ꢅ
dissipation
ꢍꢍ
-
ꢊ
-
ꢍꢍ
!ꢚ
ꢒ*
-
"ꢋꢄ
ꢀ:.
ꢍ)*ꢝ+ꢑ
ꢊ
ꢍꢍ
!ꢚ
*.
9ꢚ8
ꢀ:.
ꢍ)*ꢝ+ꢑ
"
,
*.
-
"
ꢊ
ꢊ
9ꢚ8
ꢊ
ꢊ
!ꢚ *.
9ꢚ8
ꢍꢍ
>
"
ꢀ
-
ꢙ
ꢙ
"
Any kind of load. If V
> V - V device stays off
IN IN(T+)
GND
Due to V
> 0, no V = low signal available.
ST
GND
Energy stored in load inductance:
2
L
1
E = / ·L·I
V
disconnect with energized inductive
L
2
bb
load
While demagnetizing load inductance, the energy
dissipated in PROFET is
E = Ebb + EL - ER= VON(CL)·i (t) dt,
AS
L
ꢊ
ꢕꢆꢈꢕ
ꢍꢍ
!ꢚ
with an approximate solution for R > 0Ω:
L
ꢀ:.
ꢍ)*ꢝ+ꢑ
I ·L
L
I ·R
L L
E =
AS
(V +|V
|) ꢀꢁꢂ(1+
)
OUT(CL)
bb
2·R
|V
OUT(CL)
|
*.
L
9ꢚ8
Maximum allowable load inductance for
4)
a single switch off (one channel)
ꢊ
ꢍꢍ
ꢀꢁꢂꢁꢃꢁꢄꢅ ꢆꢇꢁT
= 150°C, V = 12 V, R = 0 Ω
ꢀꢁ j,start
bb L
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 10) each switch is
Z [mH]
L
ꢛꢑꢑꢑ
ꢛꢑꢑ
ꢛꢑ
protected against loss of V
.
bb
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
ꢛ
ꢛ
&
'
ꢐ
ꢎ
+
I
[A]
L
Data Sheet
10
V1.1, 2007-05-29
INFINEON [ Infineon ]
