BSS138N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
D
60
3.5
0.23
V
Ω
A
PG-SOT-23
Type
BSS138N
BSS138N
Parameter
Package
PG-SOT-23
PG-SOT-23
Tape and Reel
L6327: 3000
L6433: 10000
Marking
SKs
SKs
Value
0.23
0.18
0.92
Unit
A
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Continuous drain current
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.23 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD sensitivity
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
MIL-STD 883 (HBM)
JESD22-A114 (HBM)
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
Class 1 (<1999V)
Class 0 (<250V)
0.36
-55 ... 150
55/150/56
V
W
°C
Rev. 2.82
page 1
2009-02-11
INFINEON [ INFINEON TECHNOLOGIES AG ]
