BSS 123
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150
-55 ... + 150
˚C
j
T
stg
1)
Thermal resistance, chip to ambient air
R
≤
≤
350
285
K/W
thJA
1)
Therminal resistance, chip-substrate- reverse side
DIN humidity category, DIN 40 040
R
thJSR
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 ˚C
V
V
I
V
(BR)DSS
GS(th)
V
100
0.8
-
-
GS
D
j
Gate threshold voltage
I = 1 mA
V
V
1.5
2
=
GS DS, D
Zero gate voltage drain current
DSS
V
V
V
= 100 V, V = 0 V, T = 25 ˚C
-
0.1
1
µA
DS
DS
DS
GS
j
= 100 V, V = 0 V, T = 125 ˚C
-
-
2
-
60
10
GS
j
= 20 V, V = 0 V, T = 25 ˚C
nA
nA
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
GSS
V
-
10
50
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
V
= 10 V, I = 0.17 A
-
-
3
6
GS
GS
D
= 4.5 V, I = 0.17 A
4.5
10
D
Data Sheet
2
05.99
INFINEON [ Infineon ]
