Smart High-Side Power Switch
BSP452
Parameter and Conditions
at
T
j
= 25 °C,
Vbb
= 13.5V unless otherwise specified
Symbol
min
Values
typ
Unit
max
Operating Parameters
Operating voltage
8
)
Undervoltage shutdown
Undervoltage restart
T
j
=-40...+150°C
T
j
=-40...+150°C
T
j
=-40...+25°C
T
j
=+150°C
Undervoltage restart of charge pumpe
7
see diagram page 7
Undervoltage hysteresis
∆
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
Overvoltage shutdown
T
j
=-40...+150°C
Overvoltage restart
T
j
=-40...+150°C
Overvoltage hysteresis
T
j
=-40...+150°C
Standby current (pin 4),
V
in
= low
T
j
=-40...+150°C
Operating current (pin 2),
V
in
= 5 V
leakage current (pin 1)
V
in
= low
T
j
=-40...+25°C
T
j
=150°C
Protection Functions
Current limit (pin 4 to 1)
T
j
= 25°C
V
bb
= 20V
T
j
= -40...+150°C
Overvoltage protection
Ibb=4mA T
j
=-40...+150°C
Output clamp (ind. load switch off)
at
V
OUT
=V
bb
-V
ON(CL),
I
bb
= 4mA
Thermal overload trip temperature
Thermal hysteresis
9
Inductive load switch-off energy dissipation )
T
j Start
= 150 °C, single pulse,
I
L
= 0.5 A,
V
bb
= 12 V
(not tested, specified by design)
10
Reverse battery (pin 4 to 2) )
(not tested, specified by design)
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆
V
bb(under)
5.0
3.5
--
--
--
34
33
--
--
--
--
--
--
--
5.6
0.3
--
--
0.7
10
1
2
34
5
6.5
7.0
7
--
42
--
--
25
1.6
5
7
V
V
V
V
V
V
V
V
µA
mA
µA
V
bb(over)
V
bb(o rst)
∆
V
bb(over)
I
bb(off)
I
GND
I
L(off)
I
L(SC)
V
bb(AZ)
V
ON(CL)
T
jt
∆
T
jt
E
AS
0.7
0.7
41
41
150
--
--
1.5
--
--
47
--
10
--
2
2.4
--
--
--
--
0.5
A
V
V
°C
K
J
-V
bb
--
--
30
V
8
)
9
)
At supply voltage increase up to
Vbb=
5.6 V typ without charge pump,
VOUT
≈
Vbb
- 2 V
While demagnetizing load inductance, dissipated energy in PROFET is
EAS=
∫
VON(CL)
*
iL(t)
dt, approx.
2
V
EAS=
1/2 *
L
*
I
L * (
V
ON(CL)
)
ON(CL) -
Vbb
10
)
Requires 150
Ω
resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the
connected load.
Data Sheet
4
V1.0, 2007-05-25
INFINEON [ INFINEON TECHNOLOGIES AG ]
