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BSP149 参数 Datasheet PDF下载

BSP149图片预览
型号: BSP149
PDF下载: 下载PDF文件 查看货源
内容描述: SIPMOS小信号三极管 [SIPMOS Small-Signal-Transistor]
分类和应用: 晶体晶体管功率场效应晶体管脉冲光电二极管
文件页数/大小: 9 页 / 207 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BSP149
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4)
SMD version, device on PCB
R
thJS
R
thJA
minimal footprint
6 cm
2
cooling area
1)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
=-3 V,
I
D
=250 µA
V
GS(th)
I
D (off)
V
DS
=3 V,
I
D
=400 µA
V
DS
=200 V,
V
GS
=-3 V,
T
j
=25 °C
V
DS
=200 V,
V
GS
=-3 V,
T
j
=125 °C
Gate-source leakage current
Saturated drain current
Drain-source on-state resistance
I
GSS
I
DSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=0 V,
V
DS
=10 V
V
GS
=0 V,
I
D
=70 mA
V
GS
=10 V,
I
D
=660 mA
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.48 A
200
-2.1
-
-
-1.4
-
-
-1
0.1
µA
V
-
-
-
-
-
-
25
115
70
K/W
Values
typ.
max.
Unit
-
-
140
-
-
-
-
-
1.7
1.0
5
10
-
3.5
1.8
nA
mA
Transconductance
g
fs
0.4
0.8
-
S
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(single layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Rev. 1.0
page 2
2003-04-03