BFR181W
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
f
T
= 8 GHz
F
= 1.45 dB at 900 MHz
3
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
2
1
VSO05561
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFR181W
Maximum Ratings
Parameter
Marking
RFs
1=B
Pin Configuration
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Package
SOT323
Value
12
20
20
2
20
2
175
150
-65 ... 150
-65 ... 150
mW
°C
mA
Unit
V
3=C
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
90 °C
1)
345
K/W
1
Jun-27-2001
INFINEON [ INFINEON TECHNOLOGIES AG ]
