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BCX56-10 参数 Datasheet PDF下载

BCX56-10图片预览
型号: BCX56-10
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦( AF对于驱动和输出级高集电极电流) [NPN Silicon AF Transistors (For AF driver and output stages High collector current)]
分类和应用: 晶体晶体管驱动
文件页数/大小: 5 页 / 149 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BCX 54 … BCX 56
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BCX 54
BCX 55
BCX 56
Collector-base breakdown voltage
I
C
= 100
µ
A
BCX 54
BCX 55
BCX 56
Emitter-base breakdown voltage
I
E
= 10
µ
A
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 ˚C
Emitter cutoff current
V
EB
= 4 V
DC current gain
1)
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V
BCX 54, BCX 55, BCX 56
BCX 54-10, BCX 55-10, BCX 56-10
BCX 54-16, BCX 55-16, BCX 56-16
I
C
= 500 mA,
V
CE
= 2 V
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter voltage
1)
I
C
= 500 mA,
V
CE
= 2 V
AC characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 20 MHz
f
T
100
MHz
V
(BR)CE0
45
60
80
V
(BR)CB0
45
60
100
V
(BR)EB0
I
CB0
I
EB0
h
FE
25
40
63
100
25
V
CEsat
V
BE
100
160
250
160
250
0.5
1
V
100
20
20
nA
µ
A
nA
5
V
Values
typ.
max.
Unit
1)
Pulse test:
t
300
µ
s,
D
= 2 %.
Semiconductor Group
3