欢迎访问ic37.com |
会员登录 免费注册
发布采购

BCV27 参数 Datasheet PDF下载

BCV27图片预览
型号: BCV27
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅达林顿晶体管 [NPN Silicon Darlington Transistors]
分类和应用: 晶体晶体管达林顿晶体管光电二极管
文件页数/大小: 8 页 / 76 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
 浏览型号BCV27的Datasheet PDF文件第1页浏览型号BCV27的Datasheet PDF文件第2页浏览型号BCV27的Datasheet PDF文件第4页浏览型号BCV27的Datasheet PDF文件第5页浏览型号BCV27的Datasheet PDF文件第6页浏览型号BCV27的Datasheet PDF文件第7页浏览型号BCV27的Datasheet PDF文件第8页  
BCV27, BCV47
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
-
I
C
= 10 mA,
I
B
= 0 , BCV27
I
C
= 10 mA,
I
B
= 0 , BCV47
30
60
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
V
µA
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BCV27
I
C
= 100 µA,
I
E
= 0 , BCV47
40
80
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
10
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0 , BCV27
V
CB
= 60 V,
I
E
= 0 , BCV47
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C, BCV27
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 °C, BCV47
-
-
-
-
I
EBO
h
FE
-
-
-
-
-
0.1
0.1
10
10
100
nA
-
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
-
DC current gain
1)
I
C
= 100 µA,
V
CE
= 1 V, BCV27
I
C
= 100 µA,
V
CE
= 1 V, BCV47
I
C
= 10 mA,
V
CE
= 5 V, BCV27
I
C
= 10 mA,
V
CE
= 5 V, BCV47
I
C
= 100 mA,
V
CE
= 5 V, BCV27
I
C
= 100 mA,
V
CE
= 5 V, BCV47
I
C
= 0.5 A,
V
CE
= 5 V, BCV27
I
C
= 0.5 A,
V
CE
= 5 V, BCV47
4000
2000
10000
4000
20000
10000
4000
2000
V
CEsat
V
BEsat
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1.5
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
Base emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
1
Pulse
-
-
test: t < 300µs; D < 2%
3
2007-04-20