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BCP69_08 参数 Datasheet PDF下载

BCP69_08图片预览
型号: BCP69_08
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管自动对焦 [PNP Silicon AF Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 514 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BCP69...
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
12
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 30 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 25 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain
2)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 1 V, BCP69-16
I
C
= 500 mA,
V
CE
= 1 V, BCP69-25
I
C
= 1 A,
V
CE
= 1 V
Collector-emitter saturation voltage
2)
I
C
= 1 A,
I
B
= 100 mA
Base-emitter voltage
2)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 1 A,
V
CE
= 1 V
V
BE(ON)
-
-
0.6
-
-
1
V
CEsat
h
FE
50
100
160
60
-
-
160
250
-
-
-
250
375
-
0.5
I
CBO
-
-
-
-
0.1
100
V
(BR)EBO
5
-
-
V
(BR)CES
25
-
-
V
(BR)CBO
25
-
-
V
(BR)CEO
20
-
-
typ.
max.
Unit
V
µA
-
V
AC Characteristics
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 100 MHz
1
For
f
T
-
100
-
MHz
calculation of
R
thJA please refer to Application Note Thermal Resistance
test: t < 300µs; D < 2%
2
Pulse
2
2008-10-10