BCP 69
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 30 mA,
I
B
= 0
Collector-emitter breakdown voltage
I
C
= 10
µ
A,
V
BE
= 0
Collector-base breakdown voltage
I
C
= 10
µ
A,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10
µ
A,
I
B
= 0
Collector-base cutoff current
V
CB
= 25 V
V
CB
= 25 V,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain
1)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 1 V
V
(BR)CE0
V
(BR)CES
V
(BR)CB0
V
(BR)EB0
I
CB0
–
–
I
EB0
h
FE
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
V
CEsat
V
BE
–
–
0.6
–
–
1
50
85
85
100
160
60
–
–
–
100
160
250
–
–
–
375
160
250
375
–
0.5
V
–
–
–
–
100
100
100
nA
µ
A
nA
–
20
25
25
5
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
I
C
= 1 A,
V
CE
= 1 V
Collector-emitter saturation voltage
1)
I
C
= 1 A,
I
B
= 100 mA
Base-emitter voltage
1)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 1 A,
V
CE
= 1 V
AC characteristics
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
–
100
–
MHz
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
INFINEON [ INFINEON TECHNOLOGIES AG ]
