BCP 51
... BCP 53
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BCP 51
BCP 52
BCP 53
Collector-base breakdown voltage
I
C
= 100
µ
A,
I
B
= 0
BCP 51
BCP 52
BCP 53
Emitter-base breakdown voltage
I
E
= 10
µ
A,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain
1)
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V
BCP 51/BCP 52/BCP 53
BCP 51/BCP 52/BCP 53-10
BCP 51/BCP 52/BCP 53-16
I
C
= 500 mA,
V
CE
= 2 V
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter voltage
1)
I
C
= 500 mA,
V
CE
= 2 V
AC characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
–
125
–
MHz
V
(BR)CE0
45
60
80
V
(BR)CB0
45
60
100
V
(BR)EB0
I
CB0
–
–
I
EB0
h
FE
25
40
63
100
25
V
CEsat
V
BE
–
–
–
–
100
160
–
–
–
–
250
160
250
–
0.5
1
V
–
–
–
–
100
20
10
nA
µ
A
µ
A
Values
typ.
max.
Unit
V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
–
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
3
INFINEON [ INFINEON TECHNOLOGIES AG ]
