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BC847CW 参数 Datasheet PDF下载

BC847CW图片预览
型号: BC847CW
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦 [NPN Silicon AF Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 19 页 / 183 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BC846...-BC850...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BC846...
I
C
= 10 mA,
I
B
= 0 , BC847..., BC850...
I
C
= 10 mA,
I
B
= 0 , BC848..., BC849...
65
45
30
V
(BR)CBO
-
-
-
-
-
-
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC846...
I
C
= 10 µA,
I
E
= 0 , BC847..., BC850...
I
C
= 10 µA,
I
E
= 0 , BC848..., BC849...
80
50
30
V
(BR)EBO
I
CBO
-
-
-
6
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 0 ,
I
C
= 10 µA
-
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
0.015
5
140
250
480
180
290
520
-
-
-
-
-
-
220
450
800
mV
DC current gain
1)
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.C
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.C
-
-
-
110
200
420
V
CEsat
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
90
200
700
900
660
-
250
600
-
-
700
770
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BE(ON)
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1
Pulse test: t < 300µs; D < 2%
580
-
5
2007-04-20