欢迎访问ic37.com |
会员登录 免费注册
发布采购

BC847C 参数 Datasheet PDF下载

BC847C图片预览
型号: BC847C
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦 [NPN Silicon AF Transistors]
分类和应用: 晶体小信号双极晶体管光电二极管放大器
文件页数/大小: 8 页 / 220 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
 浏览型号BC847C的Datasheet PDF文件第1页浏览型号BC847C的Datasheet PDF文件第2页浏览型号BC847C的Datasheet PDF文件第4页浏览型号BC847C的Datasheet PDF文件第5页浏览型号BC847C的Datasheet PDF文件第6页浏览型号BC847C的Datasheet PDF文件第7页浏览型号BC847C的Datasheet PDF文件第8页  
BC846...BC850
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0
BC846
BC847/850
BC848/849
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain 1)
I
C
= 10 µA,
V
CE
= 5 V
h
FE
-group
A
h
FE
-group
B
h
FE
-group
C
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
h
FE
-group
A
h
FE
-group
B
h
FE
-group
C
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
V
BE(ON)
580
-
660
-
700
770
V
BEsat
-
-
700
900
-
-
V
CEsat
-
-
90
200
250
600
h
FE
110
200
420
180
290
520
220
450
800
h
FE
-
-
-
140
250
480
-
-
-
I
CBO
-
-
5
BC846/847
BC848-850
I
CBO
V
(BR)EBO
6
5
-
-
-
-
-
-
15
V
(BR)CES
80
50
30
-
-
-
-
-
-
typ.
max.
Unit
V
nA
µA
-
mV
1) Pulse test: t
≤=
300
µ
s, D = 2%
3
Nov-20-2002