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BC847CW 参数 Datasheet PDF下载

BC847CW图片预览
型号: BC847CW
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦 [NPN Silicon AF Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 233 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BC846W...BC850W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0
BC846W
BC847/850W
BC848/849W
Unit
max.
V
typ.
V
(BR)CES
80
50
30
V
(BR)EBO
BC846/847W
BC848-850W
-
-
-
-
-
-
-
-
-
-
-
-
15
5
nA
µA
-
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain 1)
I
C
= 10 µA,
V
CE
= 5 V
h
FE
-group
A
h
FE
-group
B
h
FE
-group
C
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
h
FE
-group
A
h
FE
-group
B
h
FE
-group
C
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage 1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1) Pulse test: t
≤=
300
µ
s, D = 2%
6
5
I
CBO
I
CBO
h
FE
-
-
-
h
FE
110
200
420
V
CEsat
-
-
V
BEsat
-
-
V
BE(ON)
580
-
-
-
140
250
480
180
290
520
90
200
700
900
660
-
-
-
-
220
450
800
mV
250
600
-
-
700
770
3
Dec-11-2001