BC 846 ... BC 850
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 846
BC 847, BC 850
BC 848, BC 849
Collector-base breakdown voltage
I
C
= 10
µ
A
BC 846
BC 847, BC 850
BC 848, BC 849
Collector-emitter breakdown voltage
I
C
= 10
µ
A,
V
BE
= 0
BC 846
BC 847, BC 850
BC 848, BC 849
Emitter-base breakdown voltage
I
E
= 1
µ
A
BC 846, BC 847
BC 848, BC 849, BC 850
Collector cutoff current
V
CB
= 30 V
V
CB
= 30 V,
T
A
= 150 ˚C
DC current gain
I
C
= 10
µ
A,
V
CE
= 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
I
C
= 2 mA,
V
CE
= 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1)
Pulse
Values
typ.
max.
Unit
V
(BR)CE0
65
45
30
V
(BR)CB0
80
50
30
V
(BR)CES
80
50
30
V
(BR)EB0
6
5
I
CB0
–
–
h
FE
–
–
–
110
200
420
V
CEsat
–
–
V
BEsat
–
–
V
BE(on)
580
–
660
–
700
770
700
900
–
–
90
200
250
600
140
250
480
180
290
520
–
–
–
220
450
800
–
–
15
5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
nA
µ
A
–
mV
test:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
3
INFINEON [ INFINEON TECHNOLOGIES AG ]
