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BC817-25 参数 Datasheet PDF下载

BC817-25图片预览
型号: BC817-25
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦 [NPN Silicon AF Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 860 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BC817.../BC818...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BC817...
I
C
= 10 mA,
I
B
= 0 , BC818...
45
25
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
-
V
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC817...
I
C
= 10 µA,
I
E
= 0 , BC818...
50
30
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 25 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.1
50
100
nA
-
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
-
DC current gain
1)
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
-grp.16
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
-grp.25
I
C
= 100 mA,
V
CE
= 1 V,
h
FE
-grp.40
I
C
= 300 mA,
V
CE
= 1 V,
h
FE
-grp.16
2)
I
C
= 300 mA,
V
CE
= 1 V,
h
FE
-grp.25
2)
I
C
= 300 mA,
V
CE
= 1 V,
h
FE
-grp.40
2)
I
C
= 500 mA,
V
CE
= 1 V, all
h
FE
-grps.
3)
100
160
250
60
100
170
40
V
CEsat
V
BEsat
160
250
350
-
-
-
-
-
-
250
400
630
-
-
-
-
0.7
1.2
V
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
Base emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
1
Pulse
-
-
test: t < 300µs; D < 2%
2
For all BC817 and BC818 subtypes
3
For all BC817K and BC818K subtypes
3
2008-04-11