欢迎访问ic37.com |
会员登录 免费注册
发布采购

BC817-25 参数 Datasheet PDF下载

BC817-25图片预览
型号: BC817-25
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦 [NPN Silicon AF Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 50 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
 浏览型号BC817-25的Datasheet PDF文件第1页浏览型号BC817-25的Datasheet PDF文件第3页浏览型号BC817-25的Datasheet PDF文件第4页浏览型号BC817-25的Datasheet PDF文件第5页  
BC817, BC818
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 25 V,
I
E
= 0
Collector cutoff current
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain 1)
I
C
= 100 mA,
V
CE
= 1 V
h
FE
-grp.
16
h
FE
-grp.
25
h
FE
-grp.
40
DC current gain 1)
I
C
= 300 mA,
V
CE
= 1 V
h
FE
-grp.
16
h
FE
-grp.
25
h
FE
-grp.
40
Collector-emitter saturation voltage1)
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter saturation voltage 1)
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
V
BEsat
h
FE
h
FE
I
EBO
I
CBO
I
CBO
V
(BR)CEO
typ.
max.
Unit
V
45
25
-
-
-
-
-
-
-
-
-
-
-
-
-
100
50
100
nA
µA
nA
-
100
160
250
160
250
350
250
400
630
BC817
BC818
V
(BR)CBO
BC817
BC818
V
(BR)EBO
50
30
5
-
-
-
60
100
170
-
-
-
-
-
-
-
-
-
-
0.7
1.2
V
1) Pulse test: t
300µs, D = 2%
2
Nov-29-2001