BC807, BC808
PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Comlementary types: BC817, BC818 (NPN)
3
2
1
VPS05161
Type
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
Maximum Ratings
Parameter
Marking
5As
5Bs
5Cs
5Es
5Fs
5Gs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Symbol
V
CEO
V
CBO
V
EBO
BC807
45
50
5
500
1
100
200
330
150
BC808
25
30
5
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation
,
T
S
= 79 °C
Junction temperature
Storage temperature
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
mA
A
mA
mW
°C
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
215
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-29-2001
INFINEON [ INFINEON TECHNOLOGIES AG ]
