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BAV199 参数 Datasheet PDF下载

BAV199图片预览
型号: BAV199
PDF下载: 下载PDF文件 查看货源
内容描述: 硅低泄漏二极管阵列(低泄漏应用中速开关时间串联接法) [Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series)]
分类和应用: 二极管开关
文件页数/大小: 4 页 / 102 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BAV 199
Electrical Characteristics per Diode
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Breakdown voltage
I
(BR)
= 100
µ
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
Reverse current
V
R
= 70 V
V
R
= 70 V,
T
A
= 150 ˚C
AC characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
measured at
I
R
= 1 mA
C
D
t
rr
2
0.5
3
pF
µ
s
Values
typ.
max.
Unit
V
(BR)
V
F
70
V
mV
I
R
900
1000
1100
1250
nA
5
80
Test circuit for reverse recovery time
Pulse generator:
t
p
= 5
µ
s,
D
= 0.05
t
r
= 0.6 ns,
R
j
= 50
Oscillograph:
R
= 50
t
r
= 0.35 ns
C
1 pF
Semiconductor Group
2