BAS 19
… BAS 21
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage1)
V(BR)
V
120
200
250
–
–
–
–
–
–
I(BR) = 100 µA
BAS 19
BAS 20
BAS 21
Forward voltage
VF
I
F
= 100 mA
= 200 mA
–
–
–
–
1
1.25
IF
Reverse current
IR
V
R
= VR max
= VR max; T
–
–
–
–
100
100
nA
µA
VR
j
= 150 ˚C
AC characteristics
Diode capacitance
C
D
–
–
–
–
5
pF
ns
VR
= 0 V, f = 1 MHz
Reverse recovery time
= 30 mA, I = 30 mA, R
measured at I = 3 mA
t
rr
50
IF
R
L
= 100 Ω
R
Test circuit for reverse recovery time
Pulse generator: t
p
r
= 100 ns, D = 0.05
= 0.6 ns, R = 50 Ω
Oscillograph: R = 50 Ω
= 0.35 ns
C ≤ 1 pF
t
j
t
r
1)
Pulse test: tp ≤ 300 µs, D = 2 %.
Semiconductor Group
2
INFINEON [ Infineon ]
