AIKW40N65DF5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=40.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
V
GE
=0V,I
F
=20.0A
T
vj
=25°C
T
vj
=125°C
T
vj
=175°C
I
C
=0.40mA,V
CE
=V
GE
V
CE
=650V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=40.0A
650
-
-
-
-
-
-
3.2
-
-
-
-
-
1.60
1.80
1.90
1.55
1.53
1.49
4.0
-
1000
-
50.0
-
2.10
-
-
1.80
-
-
4.8
40
-
100
-
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V
F
V
GE(th)
I
CES
I
GES
g
fs
V
V
µA
nA
S
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
CC
=520V,I
C
=40.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
2500
50
9
95.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=25°C,
V
CC
=400V,I
C
=20.0A,
V
GE
=0.0/15.0V,
R
G(on)
=15.0Ω,R
G(off)
=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
19
11
165
13
0.35
0.10
0.45
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
4
V2.1
2017-06-30
INFINEON [ INFINEON TECHNOLOGIES AG ]
