4N35/36/37/38—Characteristics
T
A
=25
°
C
Emitter
Forward Voltage*
Reverse Current*
Capacitance
Detector
Breakdown Voltage, Collector-Emitter*
4N35/36/37
4N38
Breakdown Voltage, Emitter-Collector*
Breakdown Voltage, Collector-Base*
4N35/36/37
4N38
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
Leakage Current, Collector-Emitter*
4N35/36/37
4N38
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
4N35/36/37
4N38
DC Current Transfer Ratio*
4N35/36/37
4N38
Resistance, Input to Output*
Coupling Capacitance
Switching Time*
* Indicates JEDEC registered value
Symbol
V
F
I
R
C
O
BV
CEO
BV
ECO
BV
CBO
I
CEO
I
CEO
C
CE
CTR
Min.
0.9
Typ.
1.3
0.1
25
Max.
1.5
1.7
10
—
Unit
V
Condition
I
F
=10 mA
I
F
=10 mA,
T
A
=–55
°
C
V
R
=6.0 V
V
R
=0, f=1.0 MHz
I
C
=1.0 mA
I
E
=100
µ
A
I
C
=100
µ
A,
I
B
=1.0
µ
A
V
CE
=10 V,
I
F
=0
V
CE
=60 V,
I
F
=0
V
CE
=30 V,
I
F
=0,
T
A
=100
°
C
V
CE
=60 V,
I
F
=0,
T
A
=100
°
C
V
CE
=0
V
CE
=10 V,
I
F
=10 mA,
V
CE
=1.0 V,
I
F
=20 mA
V
CE
=10 V,
I
F
=10 mA,
T
A
=–55 to 100
°
C
V
IO
=500 V
f=1.0 MHz
I
C
=2.0 mA,
R
L
=100
Ω,
V
CC
=10 V
µ
A
pF
30
80
7.0
70
80
—
—
—
—
—
—
—
—
—
—
5.0
—
—
6.0
6.0
—
—
—
—
—
50
50
500
—
—
V
V
V
—
nA
µA
pF
100
20
—
—
50
30
—
0.5
10
—
—
—
—
—
—
—
%
CTR
—
R
IO
C
IO
40
—
10
11
—
—
%
—
Ω
pF
µs
t
ON
,
t
OFF
H11A1 through H11A5—Characteristics
T
A
=25
°
C
Emitter
Forward Voltage
H11A1–H11A4
H11A5
Reverse Current
Capacitance
Detector
Breakdown Voltage, Collector-Emitter
Breakdown Voltage, Emitter-Collector
Breakdown Voltage, Collector-Base
Leakage Current, Collector-Emitter
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio
H11A1
H11A2/3
H11A4
H11A5
Saturation Voltage, Collector-Emitter
Capacitance, Input to Output
Switching Time
V
CE
sat
C
IO
CTR
50
20
10
30
—
—
—
—
—
—
—
—
0.5
3.0
—
—
—
—
0.4
—
—
V
pF
µs
I
CE
=0.5 mA,
I
F
=10 mA
—
%
BV
CEO
BV
ECO
BV
CBO
I
CEO
C
CE
30
7.0
70
—
—
—
—
—
5.0
6.0
—
—
—
50
—
V
V
V
nA
pF
I
R
C
0
Symbol
V
F
Min.
—
—
—
—
Typ.
1.1
1.1
—
50
Max.
1.5
1.7
10
—
Unit
V
Condition
I
F
=10 mA
V
R
=3.0 V
V
R
=0, f=1.0 MHz
I
C
=1.0 mA,
I
F
=0 mA
I
E
=100
µ
A,
I
F
=0 mA
µ
A
pF
I
C
=10
µ
A,
I
F
=0 mA
V
CE
=10 V,
I
F
=0 mA
V
CE
=0
V
CE
=10 V,
I
F
=10 mA
t
ON
,
t
OFF
I
C
=2.0 mA,
R
L
=100
Ω,
V
CE
=10 V
Phototransistor, Industry Standard
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–55
March 27, 2000-00
INFINEON [ INFINEON TECHNOLOGIES AG ]
