4N32/4N33
PHOTODARLINGTON
OPTOCOUPLER
FEATURES
• Very High Current Transfer Ratio, 500% Min.
• High Isolation Resistance, 10
11
Ω
Typical
• Standard Plastic DIP Package
• Underwriters Lab File #E52744
•
V
VDE Approvals #0884 (Available with
Option 1)
D E
Dimensions in inches (mm)
Pin One ID.
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Base
5 Collector
4 Emitter
DESCRIPTION
The 4N32 and 4N33 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be
achieved while maintaining a high degree of isola-
tion between driving and load circuits. These opto-
couplers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic fields.
Maximum Ratings
Emitter
Peak Reverse Voltage ........................................3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25
°
C..........................100 mW
Derate Linearly from 55
°
C....................1.33 mW/
°
C
Detector
Collector-Emitter Breakdown Voltage,
BV
CEO
.......................................................... 30 V
Emitter-Base Breakdown Voltage,
BV
EBO
............................................................. 8V
Collector-Base Breakdown Voltage,
BV
CBO
.......................................................... 50 V
Emiter-Collector Breakdown Voltage,
BV
ECO
............................................................ 5 V
Collector (load) Current...............................125 mA
Power Dissipation at 25
°
C Ambient ...........150 mW
Derate Linearly from 25
°
C......................2.0 mW/
°
C
Package
Total Dissipation at 25
°
C Ambient .............250 mW
Derate Linearly from 25
°
C......................3.3 mW/
°
C
Isolation Test Voltage......................... 5300 VAC
RMS
Between Emitter and Detector,
Standard Climate: 23
°
C/50%RH,
DIN 50014
Leakage Path ........................................ 7 mm min.
Air Path................................................... 7 mm min.
Isolation Resitance
V
IO
=500 V/25
°
C ......................................
≥
10
12
Ω
V
IO
=500 V/100
°
C ....................................
≥
10
11
Ω
Storage Temperature ...................–55
°
C to +150
°
C
Operating Temperature ...............–55
°
C to +100
°
C
Lead Soldering Time at 260
°
C .................... 10 sec.
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Electrical Characteristics
(T
A
=25
°
C)
Parameter
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
BV
CEO
*
BV
CBO
*
BV
EBO
*
BV
ECO
*
I
CEO
H
FE
Package
Current Transfer Ratio
V
CEsat
Coupling Capacitance
Turn On Time
Turn Off Time
*Indicates JEDEC registered values
5–1
500
1.0
1.5
5
100
%
V
pF
µ
s
µ
s
V
CC
=10 V,
I
C
=50 mA
I
F
=200mA,
R
L
=180
Ω
I
F
=10 mA,
V
CE
=10 V
I
C
=2 mA,
I
F
=8 mA
30
50
8
5
10
1.0
13K
100
V
V
V
V
nA
I
C
=100
µ
A, I
F
=0
I
C
=100
µ
A, I
F
=0
I
C
=100
µ
A, I
F
=0
I
E
=100
µ
A, I
F
=0
V
CE
=10 V, I
F
=0
I
C
=0.5 mA
1.25
0.1
25
1.5
100
V
µ
A
pF
I
F
=50 mA
V
R
=3.0 V
V
R
=0 V
Min.
Typ.
Max.
Unit
Condition
INFINEON [ INFINEON TECHNOLOGIES AG ]
