®
ISO 9001 Registered
Process C3025
CMOS 3µm
10 Volt Analog
Electrical Characteristics
T=25
o
C Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
N
γ
N
β
N
Leff
N
∆W
N
BVDSS
N
VTF
P(N)
Minimum
0.65
40
3.05
16.5
12
Typical
0.85
0.87
48
3.40
0.550
Maximum
1.05
56
3.75
Unit
V
V
1/2
µA/V
2
µm
µm
V
V
Comments
100x4µm
100x4µm
100x100µm
100x4µm
Per side
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
Leff
P
∆W
P
BVDSS
P
VTF
P(P)
Minimum
–0.7
13
3.00
–16.5
–12
Typical
–0.9
0.75
16
3.35
0.8
Maximum
–1.1
19
3.70
Unit
V
V
1/2
µA/V
2
µm
µm
V
V
Comments
100x4µm
100x4µm
100x100µm
100x4µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Interpoly Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Passivation Thickness
Symbol
ρ
P-well(f)
ρ
N+
x
jN+
ρ
P+
x
jP+
T
GOX
T
P1P2
ρ
POLY1
ρ
POLY2
ρ
M1
T
PASS
Minimum
3.25
13
50
45
56
15
15
Typical
5.25
20
0.8
80
0.7
48
66
22
22
50
200+900
Maximum
7.25
27
100
51
76
30
30
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
nm
Ω/
Ω/
mΩ/
nm
Comments
P-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Poly-1 to Poly-2
Symbol
C
OX
C
M1P
C
M1S
C
P1P2
Minimum
0.68
0.047
0.027
0.453
Typical
0.72
0.0523
0.30
0.523
Maximum
0.78
0.0575
0.034
0.617
Unit
fF/µm
2
fF/µm
2
fF/µm
2
fF/µm
2
Comments
© IMP, Inc.
93
IMP [ IMP, INC ]
