Process C1226
Physical Characteristics
Diffusion & Thin Films
Starting Material p<100>
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
High-Voltage Gate Oxide Th
Gate Oxide Thickness
Interpoly Oxide
Symbol
Minimum
Typical
Maximum
Unit
Comments
ρN-well(f)
ρN+
xjN+
ρP+
xjP+
HTGOX
TGOX
IPOX
ρPOLY1
1.0
20
1.7
35
0.3
110
0.3
24
2.4
50
KΩ/ꢀ
Ω/ꢀ
µm
Ω/ꢀ
µm
nm
nm
nm
Ω/ꢀ
mΩ/ꢀ
mΩ/ꢀ
nm
n-well
60
150
24
33.6
42.0
30.0
45
29
200+900
50.4
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
ρM1
ρM2
TPASS
oxide+nit.
Layout Rules
High Voltage Section Rules
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
4.0µm
2.0µm
Diffusion Overlap of Contact
Poly Overlap of Contact
Contact to Poly Space
Metal-1 Overlap of Contact
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
1.0µm
1.0µm
1.5µm
1.0µm
65x65µm
5.0µm
80µm
1.5/2.0µm
3.0/2.0µm
1.5/1.5µm
1.5/1.5µm
2.5/1.5µm
2.5/1.5µm
Metal-1 Width/Space
Metal-2 Width/Space
C1226-11-01
70
IMP [ IMP, INC ]
