®
ISO 9001 Registered
Process C0810
CMOS 0.8µm
High-Resistance Poly for Analog
Electrical Characteristics
T=25
o
C Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Bottom Poly Sheet Res.
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
High Resistance Poly
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to Silicon
Metal-2 to Metal-1
Poly-1 to Poly-2
Symbol
VT
N
γ
N
β
N
Leff
N
∆W
N
BVDSS
N
VTF
P(N)
Symbol
VT
P
γ
P
β
P
Leff
P
∆W
P
BVDSS
P
VTF
P(P)
Symbol
ρ
N-well(f)
ρ
N+
x
jN+
ρ
P+
x
jP+
T
GOX
T
FIELD
ρ
POLY1
ρ
POLY2
ρ
M1
ρ
M2
T
PASS
ρ
HI-POLY
Symbol
C
OX
C
M1P
C
M1S
C
MM
C
PP
Minimum
0.6
75
Typical
0.8
0.74
94
0.8
0.3
13
17
Typical
– 0.9
0.57
31
0.85
0.4
–12
–17
Typical
0.65
60
0.25
90
0.4
17.5
700
23
23
60
30
200+900
2.0
Typical
1.97
0.046
0.028
0.038
0.822
Maximum
1.0
115
Unit
V
V
1/2
µA/V
2
µm
µm
V
V
Unit
V
V
1/2
µA/V
2
µm
µm
V
V
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
nm
Ω/
Ω/
mΩ/
mΩ/
nm
KΩ/
Unit
fF/µm
2
fF/µm
2
fF/µm
2
fF/µm
2
fF/µm
2
Comments
100x0.8µm
100x0.8µm
100x100µm
100x0.8µm
Per side
7
10
Minimum
– 0.7
25
Maximum
–1.1
37
Comments
100x0.8µm
100x0.8µm
100x100µm
100x0.8µm
Per side
–7
–10
Minimum
0.50
45
68
Maximum
0.80
75
112
Comments
n-well
15
15
40
20
1.5
Minimum
32
32
80
40
2.5
Maximum
oxide+nit.
Comments
0.69
1.015
© IMP, Inc.
15
IMP [ IMP, INC ]
