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IN74HCT32AD 参数 Datasheet PDF下载

IN74HCT32AD图片预览
型号: IN74HCT32AD
PDF下载: 下载PDF文件 查看货源
内容描述: 四2输入或门高性能硅栅CMOS [Quad 2-Input OR Gate High-Performance Silicon-Gate CMOS]
分类和应用:
文件页数/大小: 5 页 / 234 K
品牌: IKSEMICON [ IK SEMICON CO., LTD ]
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IN74HCT32A
MAXIMUM RATINGS
*
Symbol
V
CC
V
IN
V
OUT
I
IN
I
OUT
I
CC
P
D
Tstg
T
L
*
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
CC
and GND Pins
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
Value
-0.5 to +7.0
-1.5 to V
CC
+1.5
-0.5 to V
CC
+0.5
±20
±25
±50
750
500
-65 to +150
260
Unit
V
V
V
mA
mA
mA
mW
°C
°C
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
, V
OUT
T
A
t
r
, t
f
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time (Figure 1)
Min
4.5
0
-55
0
Max
5.5
V
CC
+125
500
Unit
V
V
°C
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range GND≤(V
IN
or
V
OUT
)≤V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
). Unused
outputs must be left open.
Rev. 00