IL78XX
IL7810 ELECTRICAL CHARACTERISTICS
(Refer to test circuit, Tmin<Tj<Tmax, Io=500mA, VI=16V, Ci=0.33 ㎌, Co=0.1 ㎌, unless otherwise sprcified)
Characteristic
Symbol
Vo
Test condition
Min.
9.6
Typ.
10.0
Max.
10.4
Unit
V
Tj = 25° C
5.0mA ≤Io ≤1.0A, PD ≤15W
VI = 12.5V to 25V
Output Voltage
9.5
10.0
10.5
VI = 13.5V to 25V
VI = 12.5V to 25V
10
3
200
100
200
400
8
Tj =
25° C
Line Regulation
∆Vo
VI = 13V to 25V
Io = 5.0mA to 1.5A
Io = 250mA to 750mA
Tj = 25° C
mV
12
4
Tj =
25° C
Load Regulation
Quiescent current
∆Vo
Iq
5.1
mA
mA
Io = 5mA to 1A
VI = 12.5V to 29V
VI = 13.5V to 29V
Io = 5mA
0.5
1
Quiescent current
Change
∆Iq
Output voltage Drift
Output noise voltage
Ripple Rejection
Dropout voltage
Peak current
∆Vo/∆T
Vn
-1
58
71
2
mV/° C
㎶
dB
V
f = 10Hz to 100KHz, Ta = 25° C
f = 120Hz, VI = 13V to 23V
Io = 1A, Tj = 25° C
Tj = 25° C
RR
56
Vd
Ipk
2.2
17
250
A
Output Resistance
Short circuit current
Ro
f = 1KHz
Isc
mA
Vi = 35V, Ta = 25° C
* Load and lone regulation are specified at constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
Rev. 02
IKSEMICON [ IK SEMICON CO., LTD ]
