IDT71V016SA, 3.3V CMOS Static RAM
for Automotive Applications 1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Recommended Operating
Symbol
Rating
Value
Unit
Temperature and Supply Voltage
VDD
Supply Voltage Relative to
–0.5 to +4.6
V
Grade
Temperature
-40°C to +125°C
-40°C to +105°C
-40°C to +85°C
0°C to +70°C
V
SS
VDD
VSS
Automotive Grade 1
Automotive Grade 2
Automotive Grade 3
Automotive Grade 4
0V
0V
0V
0V
See Below
See Below
See Below
Terminal Voltage Relative
to VSS
–0.5 to VDD+0.5
V
VIN, VOUT
T
BIAS
Temperature Under Bias
Junction Temperature Page
Storage Temperature
Power Dissipation
–55 to +125
–40 to +150
–65 to +150
1.25
oC
oC
oC
W
TJ
See Below
6818 tbl 04
TSTG
P
T
Recommended DC Operating
Conditions
IOUT
DC Output Current
50
mA
Symbol
Parameter
Supply Voltage
Min.
3.0
0
Typ.
Max.
3.6
0
Unit
V
6818 tbl 03
NOTE:
1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause
permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation
ofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperational
sections of this specification is not implied. Exposure to absolute maximum rating
conditionsforextendedperiodsmayaffectreliability.
VDD
3.3
Vss
Ground
0
V
____
V
IH
Input High Voltage
Input Low Voltage
2.0
V
DD+0.3(1)
V
(1)
____
VIL
–0.3
0.8
V
Capacitance
6818 tbl 05
NOTE:
(TA = +25°C, f = 1.0MHz, SOJ/TSOP package)
1. Refer to maximum overshoot/undershoot diagram below. The measured
voltage at device pin should not exceed half sinusoidal wave with 2V peak and
half period of 2ns.
Symbol
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions
IN = 3dV
OUT = 3dV
Max. Unit
CIN
V
6
7
pF
CI/O
V
pF
MaximumOvershoot/Undershoot
6818 tbl 06
NOTE:
+2V
1. Thisparameterisguaranteedbydevicecharacterization,butnotproductiontested.
V
IH
2ns
2ns
VIL
-2V
6818 drw 12
DC Electrical Characteristics
(VDD = Min. to Max., Automotive Temperature Ranges)
Automotive
Temperature
Grade
IDT71V016SA
Symbol
Parameter
Input Leakage Current
Test Conditions
DD = Max., VIN =
Min.
Max.
Unit
___
___
___
___
___
1 and 2
3 and 4
1 and 2
3 and 4
5
1
5
1
|ILI|
V
VSS to VDD
µA
|ILO|
Output Leakage Current
VDD = Max., CS = VIH, VOUT = VSS to VDD
µA
V
VOL
Output Low Voltage
Output High Voltage
I
OL = 8mA, VDD = Min.
0.4
___
VOH
I
OH = -4mA, VDD = Min.
2.4
V
6818 tbl 07
6.42
3
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
