欢迎访问ic37.com |
会员登录 免费注册
发布采购

IDT70V5378S100BC 参数 Datasheet PDF下载

IDT70V5378S100BC图片预览
型号: IDT70V5378S100BC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 64 / 32K X 18同步FOURPORT静态RAM [3.3V 64/32K X 18 SYNCHRONOUS FOURPORT STATIC RAM]
分类和应用: 存储内存集成电路静态存储器时钟
文件页数/大小: 29 页 / 395 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
 浏览型号IDT70V5378S100BC的Datasheet PDF文件第5页浏览型号IDT70V5378S100BC的Datasheet PDF文件第6页浏览型号IDT70V5378S100BC的Datasheet PDF文件第7页浏览型号IDT70V5378S100BC的Datasheet PDF文件第8页浏览型号IDT70V5378S100BC的Datasheet PDF文件第10页浏览型号IDT70V5378S100BC的Datasheet PDF文件第11页浏览型号IDT70V5378S100BC的Datasheet PDF文件第12页浏览型号IDT70V5378S100BC的Datasheet PDF文件第13页  
IDT70V5388/78  
3.3V 64/32K x 18 Synchronous FourPort™ Static RAM  
Industrial and Commercial Temperature Ranges  
Capacitance(1)  
AbsoluteMaximumRatings(1)  
(TA = +25°C, F = 1.0MHZ)  
Symbol  
Rating  
Commercial  
& Industrial  
Unit  
V
Symbol  
Parameter  
Input Capacitance  
Output Capacitance  
Conditions(2)  
IN = 3dV  
OUT = 3dV  
Max. Unit  
(2 )  
Terminal Voltage  
with Respect to GND  
-0.5 to +4.6  
CIN  
V
8
pF  
pF  
V
TERM  
(3)  
OUT  
C
V
10.5  
Temperature Under Bias  
-55 to +125  
oC  
(3)  
T
BIAS  
STG  
JN  
OUT  
5649 tbl 09  
NOTES:  
T
Storage Temperature  
Junction Temperature  
DC Output Current  
-65 to +150  
+150  
oC  
oC  
1. These parameters are determined by device characterization, but are not  
production tested.  
2. 3dV references the interpolated capacitance when the input and output switch  
from 0V to 3V or from 3V to 0V.  
T
I
50  
mA  
3. COUT also references CI/O.  
5623 tbl 06  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or  
4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.  
3. Ambient Temperature under DC Bias. No AC conditions. Chip Deselected.  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)  
70V5388/78S  
Symbol  
Parameter  
Input Leakage Current(1)  
JTAG Input Leakage Current(1,2)  
Output Leakage Current(1)  
Output Low Voltage  
Test Conditions  
DD = Max., VIN = 0V to VDD  
Min.  
Max.  
10  
Unit  
µA  
µA  
µA  
V
___  
___  
___  
___  
|ILI  
|ILI  
|ILO  
|
V
V
V
|
DD = Max., VIN = 0V to VDD  
30  
|
OUT = 0V to VDD, Outputs in tri-state mode  
10  
V
OL  
OH  
I
OL = +4mA, VDD = Min.  
0.4  
___  
V
Output High Voltage  
I
OH = -4mA, VDD = Min.  
2.4  
V
5649 tbl 10  
NOTE:  
1. At VDD < 2.0V leakages are undefined.  
2. Applicable only for TMS, TDI and TRST inputs.  
9
6.42  
 复制成功!