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IDT7005S35JG 参数 Datasheet PDF下载

IDT7005S35JG图片预览
型号: IDT7005S35JG
PDF下载: 下载PDF文件 查看货源
内容描述: [Dual-Port SRAM, 8KX8, 35ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.120 INCH HEIGHT, GREEN, PLASTIC, LCC-68]
分类和应用:
文件页数/大小: 20 页 / 265 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
IDT7005S
Symbol
|I
LI
|
|I
LO
|
V
OL
V
OH
Parameter
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
CE
IDT7005L
Min.
2.4
Max.
5
5
0.4
Unit
µA
µA
V
V
2738 tbl 08
Min.
2.4
Max.
10
10
0.4
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
Symbol
I
CC
Parameter
Dynamic Operating
Current
(Both Ports Active)
I
SB1
Standby Current
(Both Ports — TTL
Level Inputs
I
SB2
Standby Current
(One Port — TTL
Level Inputs)
I
SB3
CE
Test
Condition
= V
IL
, Outputs Open
SEM
= V
IH
f = f
MAX(3)
CE
L
Version
MIL.
S
L
7005X15
Com'l. Only
Typ.
(2)
Max.
170
160
20
10
105
95
1.0
0.2
100
90
310
260
60
60
190
160
15
5
170
140
7005X17
Com'l. Only
Typ.
(2)
Max.
170
160
20
10
105
95
1.0
0.2
100
90
310
260
60
50
190
160
15
5
170
140
7005X20
Typ.
(2)
Max.
160
150
160
150
20
10
20
10
95
85
95
85
1.0
0.2
1.0
0.2
90
80
90
80
370
320
290
240
90
70
60
50
240
210
180
150
30
10
15
5
225
200
155
130
7005X25
Typ.
(2)
Max. Unit
155
145
155
145
16
10
16
10
90
80
90
80
1.0
0.2
1.0
0.2
85
75
85
75
340
280
265
220
80
65
60
50
215
180
170
140
30
10
15
5
200
170
145
120
mA
mA
mA
mA
mA
COM. S
L
MIL.
S
L
SEM
R
=
CE
R
= V
IH
=
SEM
L
= V
IH
f = f
MAX(3)
CE
"A"=
COM. S
L
MIL.
S
L
COM. S
L
MIL.
S
L
V
IL
and
CE
"B"=
V
IH(5)
Active Port Outputs Open
f = f
MAX(3)
SEM
R
=
SEM
L
> V
IH
Full Standby Current Both Ports
CE
L
and
(5)
(Both Ports — All
CE
R
> V
CC
- 0.2V
CMOS Level Inputs) V
IN
> V
CC
- 0.2V or
COM. S
(4)
V
IN
< 0.2V, f = 0
L
SEM
R
=
SEM
L
> V
CC
- 0.2V
I
SB4
Full Standby Current
(One Port — All
CMOS Level Inputs)
< 0.2V and
MIL.
CE"
B"
> V
CC
- 0.2v
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
COM.
V
IN
< 0.2V
Active Port Outputs Open,
f = f
MAX(3)
CE"
B"
S
L
S
L
NOTES:
2738 tbl 09
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25°C, and are not production tested. I
CC DC
= 120mA typ.)
3. At f = f
MAX
,
address and I/O'
S
are cycling at the maximum frequency read cycle of 1/t
RC
, and using “AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A"may be either left or right port. Port "B" is the port opposite port "A".
6.06
5