IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
(5,6)
7005X15
Com'l Only
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
t
SWRD
t
SPS
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1,2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1,2)
Output Active from End-of-Write
(1,2,4)
SEM
Flag Write to Read Time
SEM
Flag Contention Window
15
12
12
0
12
0
10
____
____
____
7005X17
Com'l Only
Min.
Max.
7005X20
Com'l &
Military
Min.
Max.
7005X25
Com'l &
Military
Min.
Max.
Unit
Parameter
Min.
Max.
17
12
12
0
12
0
10
____
____
____
20
15
15
0
15
0
15
____
____
____
25
20
20
0
20
0
15
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2738 tbl 14a
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
10
____
10
____
12
____
15
____
0
____
0
____
0
____
0
____
10
____
10
____
12
____
15
____
0
5
5
0
5
5
0
5
5
0
5
5
____
____
____
____
____
____
____
____
7005X35
Com'l, Ind
& Military
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
t
SWRD
t
SPS
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1,2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1,2)
Output Active from End-of-Write
(1,2,4)
SEM
Flag Write to Read Time
SEM
Flag Contention Window
35
30
30
0
25
0
15
____
____
____
7005X55
Com'l, Ind
& Military
Min.
Max.
7005X70
Military Only
Min.
Max.
Unit
Parameter
Min.
Max.
55
45
45
0
40
0
30
____
____
____
70
50
50
0
50
0
40
____
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2738 tbl 14b
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
15
____
25
____
30
____
0
____
0
____
0
____
15
____
25
____
30
____
0
5
5
0
5
5
0
5
5
____
____
____
____
____
____
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM,
CE
= V
IL
,
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary over voltage
and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. 'X' in part number indicates power rating (S or L).
6. Industrial temperature: for other speeds, packages and powers contact your sales office.
6.42
9
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
