IDT49FCT805/A
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGE
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
OE
A
=
OE
B
= GND
50% Duty Cycle
I
C
Total Power Supply Current
(6)
V
CC
= Max.
Outputs Open
f
O
= 10MHz
50% Duty Cycle
OE
A
=
OE
B
= V
CC
Mon. Output Toggling
V
CC
= Max.
Outputs Open
f
O
= 2.5MHz
50% Duty Cycle
OE
A
=
OE
B
= GND
Eleven Outputs Toggling
NOTES:
1.
2.
3.
4.
5.
For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
Typical values are at V
CC
= 5V, +25°C ambient.
Per TTL driven input (V
IN
= 3.4V); all other inputs at V
CC
or GND.
This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
Values for these conditions are examples of the I
C
formula. These limits are guaranteed but not tested.
6.
I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
O
N
O
)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input (V
I
N
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
O
= Output Frequency
N
O
= Number of Outputs at f
O
All currents are in milliamps and all frequencies are in megahertz.
Test Conditions
(1)
Min.
—
Typ.
(2)
1
0.15
Max.
2.5
0.2
Unit
mA
mA/MHz
V
IN
= V
CC
V
IN
= GND
—
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
—
1.5
2.5
—
2
3.8
—
4.1
6
(5)
mA
—
5.1
8.5
(5)
4
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
