ICS162834
Advance Information
Electrical Characteristics - DC
T
A
= 0 - 70° C; V
DD
= 3.3 ± 0.3V, V
DDQ
=3.3 ± 0.3V; (unless otherwise stated)
SYMBOL
V
IH
V
IL
V
OH
V
OL
I
I
I
OZ
I
DD
PARAMETERS
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
Low-level output voltage
Input leakage current
Off-state leakage current
Quiescent Supply Current
CONDITIONS
V
DD
(V)
3.0 - 3.6
3.0 - 3.6
3.0
3.0
3.0 - 3.6
MIN
2.0
0.8
2.2
0.8
±10
±20
±40
TYP
MAX
UNITS
V
V
V
µA
µA
µA
I
OH
= -12 mA, V
IH
= 2.0V
I
OL
= 12 mA, V
IL
= 0.8V
V
I
= V
DD
or GND
V
O
= V
DD
or GND#, OE = V
DD
V
I
= V
DD
or GND, I
O
= 0
* Parameters are characterized over recommended operating conditions.
Critical Register Specifications*
SYMBOL
PARAMETERS
CONDITION
V
DD
(V)
MIN
TYP
MAX
UNITS
Propagation Delay (CK to Y)
R
L
= 500
Ω,
C
L
= 50 pF
3.0 - 3.6
1.4
3.5
ns
t
PD
**
t
PD
**
Propagation Delay (CK to Y)
R
L
= 500
Ω,
C
L
= 30 pF
3.0 - 3.6
0.7
2.5
ns
Setup time (A before CK)
3.0 - 3.6
1.0
ns
t
S
t
H
Hold time (A after CK)
3.0 - 3.6
0.6
ns
Clock input capacitance
3.0 - 3.6
3.3
4.0
6.0
pF
C
I
* Parameters are characterized over recommended operating conditions.
** The t
PD
value in this table would equate to the 'Time-to-Vm' delay described in the post register timing specifications of the
PC133 registered DIMM Specification. The first value applies to DIMMs with nine SDRAM loads per register output, and the
second to DIMMs with eighteen SDRAM loads per register output. These values should serve as only an initial starting point,
0774—02/10/03
4
ICS [ INTEGRATED CIRCUIT SYSTEMS ]
