iC-WJB
2.7 V LASER DIODE DRIVER
Rev E1, Page 4/12
ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC = 2.7...6 V, RSET = 2.7...27 kΩ, I(AMD) = 0.15...1.5 mA, Tj = -25...125 °C, unless otherwise noted.
Item Symbol
No.
Parameter
Conditions
Unit
Min.
Typ.
Max.
Total Device
001 VCC
Permissible Supply Voltage
Range
2.7
4
6
V
002 Idc(VCC) Supply Current in VCC
003 I0(VCC)
004 Iav(VCC) Supply Current in VCC (average Ipk(KLD) = 80 mA, f(IN) = 200 kHz ±20 %,
value) twhi / twlo = 1
RSET = 5 kΩ, IN = hi, Idc(KLD) = 40 mA
7
5
9
13
mA
mA
mA
Standby Supply Current in VCC REST= 5 kΩ, IN = lo, Tj = 27 °C
15
005 tp(IN-KLD) Delay Time Pulse Edge V(IN) to IN(hi ↔ lo), V(50 %) : I(50 %)
65
135
ns
I(KLD)
006 Pcon
Power Consumption
VCC = 3 V, V(KLD) ≈ 0.6 V, RSET = 5 kΩ,
50
mW
Idc(KLD) = 40 mA
007
Vc()hi
Clamp Voltage hi at VCC, IN,
AMD, KLD, CI, CWD, ISET
I() = 2 mA, other pins open
Tj = 27 °C
6.2
10
V
V
7.5
Driver
101
Vs(KLD)
Saturation Voltage at KLD
IN = hi, I(KLD) = 80 mA
Tj = 27 °C
0.3
V
V
0.11
102 Vs(KLD)
103 I0(KLD)
Saturation Voltage at KLD
Leakage Current in KLD
Voltage at AMD
IN = hi, I(KLD) = 100 mA
IN = lo, V(KLD) = VCC
0.4
10
V
µA
104
105
106
107
V(AMD)
I(AMD) = 1.5 mA
Tj = 27 °C
0.4
1.0
V
V
0.84
30
tr
Current Rise Time in KLD
Current Fall Time in KLD
Current Ratio I(AMD)/I(ISET)
Imax(KLD) = 20...80 mA, Ip(): 10 → 90 %
100
100
ns
ns
Tj = 27 °C
tf
Imax(KLD) = 20...80 mA, Ip(): 90 % → 10 %
ns
ns
Tj = 27 °C
20
CR1()
I(CI) = 0, closed control loop;
RSET = 2.7..27 kΩ
RSET = 27..330 kΩ
2.4
2.4
3
3.6
3.8
5.4
108 CR2()
109
Current Ratio I(AMD)/I(CI)
V(CI) = 1...2 V, ISET open
2.7
3
3.3
TC1()
Temperature Coefficient of
Current Ratio I(AMD)/I(ISET)
I(CI) = 0, closed control loop;
RSET = 2.7...27 kΩ
RSET = 27...330 kΩ
0.01
-0.1
% / °C
% / °C
-0.25
Input IN
201 Vt()hi
202 Vt()lo
Threshold hi
Threshold lo
Hysteresis
45
40
20
70
65
%VCC
%VCC
203
Vt()hys
mV
mV
Tj = 27 °C
65
10
204
Rin
Pull-Down Resistor
V(IN) = -0.3 V...VCC
Tj = 27 °C
4
16
kΩ
kΩ
205 V0()
Open-loop Voltage
I(IN) = 0
0.1
V
Reference und Thermal Shutdown
301
V(ISET)
Voltage at ISET
1.16
1.28
V
V
Tj = 27 °C
1.22
1
302 CR()
Current Ratio I(CI)/I(ISET)
V(CI) = 1...2 V, I(AMD) = 0
0.9
2.7
1.12
330
303 RSET
Permissible Resistor at ISET
(Control Set-up Range)
kΩ
304 Toff
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
125
10
150
40
°C
°C
305 Thys
Power-Down and Watchdog
401
VCCon
Turn-on Threshold VCC
Undervoltage Threshold at VCC
Hysteresis
2.4
2.3
70
2.7
V
V
Tj = 27 °C
2.6
402
VCCoff
2.63
V
V
Tj = 27 °C
2.5
403 VCChys
404 Vs(CI)off
VCChys = VCCon − VCCoff
I(CI) = 300 µA, VCC < VCCoff
100
150
1.5
mV
V
Saturation Voltage at CI with
undervoltage
ICHAUS [ IC-HAUS GMBH ]
