IC-NZP 参数 Datasheet PDF下载

iC-NZP

P-TYPE LASER DIODE DRIVER

nar y

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Rev B1, Page 6/15

ELECTRICAL CHARACTERISTICS

Operating Conditions: VDD = 3...5.5 V, VSY = 0 V...VDD, Tj = -40...85 °C, NSLP = hi, NCID = hi; unless otherwise stated

Item

No.

306

307

308

309

310

311

312

313

314

315

316

317

318

Symbol

Vhys(EP)

Ipd(EP)

Vt()hi

Vt()lo

Vhys()

Ipu()

Ipd()

Vs()hi

Vs()lo

Isc()hi

Isc()lo

I(NERR)

Vs()lo

Parameter

Hysteresis at EP

Pull-Down Current at EP

Input Threshold Voltage hi at

TTL, REGE, NSLP, AVG, NCID

Input Threshold Voltage lo at

TTL, REGE, NSLP, AVG, NCID

Hysteresis at TTL, REGE, NSLP,

AVG, NCID

Pull-Up Current at TTL, REGE,

NCID

Saturation voltage hi at SYN

Saturation voltage lo at SYN

Short-circuit Current hi at SYN

Short-circuit Current lo at SYN

Current in NERR

Saturation Voltage lo at NERR

V() = 0...VDD

−

1.2 V

0.8

130

-60

2

230

-2

130

0.4

0.4

-40

3

1

-3

40

20

600

Conditions

Min.

TTL = hi, EN = open

TTL = hi, EN = open, V() = 1 V...VDD

40

0.5

5

2

Typ.

Max.

mV

µA

V

V

mV

µA

µA

V

V

mA

mA

mA

mV

Unit

Pull-Down Current at NSLP, AVG V() = 1 V...VDD

Vs(SYN)hi = VSY

−

V(SYN), I() = -1 mA,

VSY = VDD, EP = TTL = hi, EN = open

I() = 1 mA, VSY = VDD, TTL = hi, EP = lo,

EN = open

EP = TTL = hi, EN = open, V(SYN) = 0 V,

VSY = VDD

TTL = hi, EP = lo, EN = open, V(SYN) = VSY,

VSY = VDD

V(NERR) > 0.6 V, error

I() = 1 mA, error

Vs(LDA)hi = V(VDDL)

−

V(LDA); RSI = 680

Ω

I(LDA) = 300 mA, VDD = 4.5...5.5 V

I(LDA) = 100 mA, VDD = 4.5...5.5 V

I(LDA) = 60 mA, RSI = 2.5 kΩ VDD = 3...3.5 V

Laser Driver LDA, CI, IMON

401 Vs(LDA)hi Saturation Voltage hi at LDA

1.6

1.2

0.8

-300

0

10

0

20

-2.6

1/330

2.2

2

1.3

V

V

V

mA

nF

µA

µA

µA

I(LDA)

402

403

404

Idc(LDA)

C(CI)

|I(CI)|

Permissible DC Current in LDA

Required Capacitor at CI

Charge Current from CI

iC active, REGE = hi, V(VDD)

−

V(CI) = 1 V;

NCID = hi

NCID = lo

iC active, REGE = NCID = lo, V(RSI) = VDD,

V(CI) = 0 V...VDD

−

1 V

V(IMON)=0.5V;

I(LDA) < 100 mA, VDD = 3...4.5 V

I(LDA) < 300 mA, VDD = 4.5...5.5 V

CVDDA = 1 µF, RSI = 1 kΩ

VDD = 5 V see Fig. 2

VDD = 5 V see Fig. 2

VDD = 5 V

60

-0.3

1/210

405

406

Ipu(CI)

Imon()

Pull-Up Current in CI

Current at IMON

Timing

501

502

503

504

twu

tr

tf

tp

Time to Wakeup:

NSLP lo

→

hi to system enable

Laser Current Rise Time

Laser Current Fall Time

Propagation Delay

V(EPx, ENx)

→

I(LDAx)

300

1.5

1.5

10

µs

ns

ns

ns