iC-NZP
P-TYPE LASER DIODE DRIVER
nar y
limi
pre
Rev B1, Page 5/15
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3...5.5 V, VSY = 0 V...VDD, Tj = -40...85 °C, NSLP = hi, NCID = hi; unless otherwise stated
Item
No.
001
002
003
004
005
006
007
008
Symbol
Parameter
Conditions
Min.
VDD
VSY
Ioff(VDD)
Idc(VDD)
I(VSY)
Toff
VDDon
Vc()hi
Permissible Supply Voltage
Permissible Supply Voltage at
VSY
Supply Current in VDD
Supply Current in VDD
Supply Current in VSY
Thermal Shutdown Threshold
Power-On Threshold
Clamp Voltage hi at RSI, TTL,
I() = 0.1 mA, other pins open, VDD = 0
REGE, MD, CI, LDA, VDDA,
VDDL, NSLP, IMON, NCID, AVG
I() = 1 mA, other pins open, VSY = 0
Clamp Voltage lo at VDD, AVG, I() = -1 mA, other pins open
MD, IMON, NCID, EP, EN, TTL,
VSY, SYN, RVDD, VDDL, VDDA,
CI, LDA, RSI, REGE, NSLP,
NERR
I() = 1 mA, other pins open, VDD = 0
420
VDD = 3...3.5 V
VDD = 4.5...5.5 V
When not connected to VDDA
V(RSI) = VDD;
VDD = 4.5...5.5 V
VDD = 3...3.5 V
2.5
0.68
400
0
-980
-820
100
V(VDDA) = 0 V;
VDD = 3...5.5 V
V(REGE) = V(TTL) = V(EP) = VDD,
V(LDA) = 0 V, V(MD) = 0;
VDD = 3...5.5 V
RSI = 680
Ω,
VDD = 5.5 V
NSLP = lo, V(VDDA) = VDD
V(MD)
−
V(RGND),
V(RVDD)
−
V(MD) for P-type LD,
closed control loop
closed control loop
V(RVDD)
−
V(MD);
V(EP) = 0, V(AVG) = 0, P-type MD
TTL = lo, VDD = 3.0...5.5 V
TTL = lo, Vd() = |V(EP)
−
V(EN)|
V(EP), V(EN) < VDD
−
1.5 V, TTL = lo
500
500
VSY
≤
VDD
NSLP = lo, all other input pins set to lo
RSI
≥
680
Ω
SYN pin open
130
1.7
0.3
3
3
5
10
Typ.
Max.
5.5
5.5
50
15
10
196
2.8
1.6
V
V
µA
mA
µA
°C
V
V
Unit
Total Device
009
010
Vc(SYN)hi Clamp Voltage hi to VSY
Vc()lo
0.3
-1.5
-0.65
1.5
-0.3
V
V
011
101
102
103
104
105
Vc(VSY)hi Clamp Voltage hi at VSY
V(RSI)
RSI
V(VDDA)
V(VDDL)
Voltage at RSI
Permissible Resistor at RSI
6
580
9
9
620
V(VDD)
-400
-270
V
mV
kΩ
kΩ
mV
Current Monitor RSI, VDDA, VDDL, LDA
VDDA Voltage Monitor Threshold VDD
−
V(VDDA), V(RSI) = VDD
Permissible voltage at VDDL
Ierr(VDDA) Maximum current from VDDA
without error signalling
Cmin()
rIVDDA
rILDA
Minimum capacitor required at
VDDA
Current Ratio
I(VDDA)max / I(RSI)
Current Ratio I(LDA)max / I(RSI)
mA
mA
nF
106
107
108
460
630
470
-630
1
210
250
970
mA
20
320
kΩ
mV
109
110
201
i(LDA)
Rdis()
V(MD)
Maximum limited current
Discharge Resistor at VDDA
Reference Voltage
Reference
202
203
dV(MD)
V(MD)
Temperature Drift of Voltage at
MD
Precharge Reference Voltage
120
µV/°C
230
0.6
200
0.6
280
360
VDD
−
1.4
mV
V
mV
Digital Inputs/Outputs
301
302
303
304
305
Vin()
Vd()
R()
Vt(EP)hi
Vt(EP)lo
Input Voltage Range at EP, EN
Input Differential Voltage at EP,
EN
Differential Input Impedance at
EP, EN
3
2
kΩ
V
V
Input Threshold Voltage hi at EP TTL = hi, EN = open
Input Threshold Voltage lo at EP TTL = hi, EN = open
0.8
ICHAUS [ IC-HAUS GMBH ]
