IC-NZN_11 参数 Datasheet PDF下载

iC-NZN

N-TYPE LASER DIODE DRIVER

nar y

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Rev B1, Page 6/17

ELECTRICAL CHARACTERISTICS

Operating Conditions: VDD = 3...5.5 V, VSY = 0 V...VDD, Tj = -20...125 °C, NSLP = hi, CID = lo; unless otherwise stated

Item

No.

306

307

308

309

310

311

312

313

314

315

316

317

318

Symbol

Vhys(EP)

Ipd(EP)

Vt()hi

Vt()lo

Vhys()

Ipu()

Ipd()

Vs()hi

Vs()lo

Isc()hi

Isc()lo

I(NERR)

Vs()lo

Parameter

Hysteresis at EP

Pull-Down Current at EP

Input Threshold Voltage hi at

TTL, REGE, NSLP, AVG, CID

Input Threshold Voltage lo at

TTL, REGE, NSLP, AVG, CID

Hysteresis at TTL, REGE, NSLP,

AVG, CID

Pull-Up Current at TTL, REGE

V() = 0...VDD

−

1.2 V

Pull-Down Current at NSLP, AVG, V() = 1 V...VDD

CID

Saturation voltage hi at SYN

Saturation voltage lo at SYN

Short-circuit Current hi at SYN

Short-circuit Current lo at SYN

Current in NERR

Saturation Voltage lo at NERR

Vs(SYN)hi = VSY

−

V(SYN), I() = -1 mA,

VSY = VDD, EP = TTL = High, EN = open

I() = 1 mA, TTL = High, VSY = VDD, EP = Low,

EN = open

EP = TTL = High, EN = open, V(SYN) = 0 V,

VSY = VDD

EP = TTL = High, EN = open, V(SYN) = 0 V,

VSY = VDD

V(NERR) > 0.6 V, error

I() = 1 mA, error

I(LDK) = 300 mA, RSI = 680

Ω,

VDD=4.5...5.5 V

I(LDK) = 100 mA, RSI = 680

Ω

VDD=4.5...5.5 V

I(LDK) = 60 mA, RSI = 2.5 kΩ VDD=3...3.5 V

1.6

1.2

0.8

-40

3

1

0.8

140

-60

2

230

-2

130

0.4

0.4

-3

25

20

600

3

2

1.3

300

12

0

iC active, REGE = hi, V(CI) = 1 V, CID = 0 V

iC active, REGE = hi, V(CI) = 1 V, CID = VDD

iC active, REGE = lo, CID = hi, V(CI) = 1 V,

VDD = 3...5.5 V

V(IMON) = VDD

−

0.5 V, I(LDK) < 300 mA,

VDD = 4.5...5.5 V

20

0.3

1/280

10

0

65

2.6

1/200

0.5

Conditions

Min.

TTL = hi, EN = open

TTL = hi, EN = open, V() = 1 V...VDD

40

0.5

5

2

Typ.

Max.

mV

µA

V

V

mV

µA

µA

V

V

mA

mA

mA

mV

V

V

V

mA

V

nF

µA

µA

µA

I(LDK)

mA

Unit

Laser Driver LDK, CI, IMON

401 Vs(LDK)lo Saturation Voltage lo at LDK

402

403

404

405

406

407

408

409

Idc(LDK)

Vo()

C(CI)

|I(CI)|

Ipd(CI)

Imon()

Permissible DC Current in LDK

Permissible Voltage at LDK

Required Capacitor at CI

Charge Current from CI

Pull-Down Current in CI

Current at IMON

Imin(LDK) Minimum permissible current

pulse

Imax(LDK) Maximum obtainable current from V(REGE) = V(TTL) = V(EP) = VDD,

the driver

V(MD) = 0 V;

VDD = 4.5...5.5 V

VDD = 3...4.5 V

twu

tr

tf

tp

Time to Wakeup:

NSLP lo

→

hi to system enable

Laser Current Rise Time

Laser Current Fall Time

Propagation Delay

V(EPx, ENx)

→

I(LDKx)

CLDA = 1 µF, RSI = 680

Ω

VDD = 5 V see Fig. 2

VDD = 5 V see Fig. 2

VDD = 5 V

300

90

300

1.5

1.5

10

mA

mA

µs

ns

ns

ns

Timing

501

502

503

504