iC-NZN
N-TYPE LASER DIODE DRIVER
Rev A1, Page 5/16
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3...5.5 V, VSY = 0 V...VDD, Tj = -20...125 °C, NSLP = hi, CID = lo; unless otherwise stated
Item Symbol
No.
Parameter
Conditions
Unit
Min.
40
Typ.
Max.
306 Vhys(EP) Hysteresis at EP
TTL = hi, EN = open
mV
µA
V
307 Ipd(EP)
308 Vt()hi
Pull-Down Current at EP
TTL = hi, EN = open, V() = 1 V...VDD
0.5
5
2
Input Threshold Voltage hi at
TTL, REGE, NSLP, AVG, CID
309 Vt()lo
310 Vhys()
Input Threshold Voltage lo at
TTL, REGE, NSLP, AVG, CID
0.8
V
Hysteresis at TTL, REGE, NSLP,
AVG, CID
140
230
mV
311 Ipu()
312 Ipd()
Pull-Up Current at TTL, REGE
V() = 0...VDD − 1.2 V
-60
2
-2
µA
µA
Pull-Down Current at NSLP, AVG, V() = 1 V...VDD
CID
130
313 Vs()hi
314 Vs()lo
315 Isc()hi
316 Isc()lo
Saturation voltage hi at SYN
Saturation voltage lo at SYN
Short-circuit Current hi at SYN
Short-circuit Current lo at SYN
Vs(SYN)hi = VSY − V(SYN), I() = -1 mA,
0.4
0.4
-3
V
V
VSY = VDD, EP = TTL = High, EN = open
I() = 1 mA, TTL = High, VSY = VDD, EP = Low,
EN = open
EP = TTL = High, EN = open, V(SYN) = 0 V,
VSY = VDD
-40
3
mA
mA
EP = TTL = High, EN = open, V(SYN) = 0 V,
VSY = VDD
25
317 I(NERR)
318 Vs()lo
Current in NERR
V(NERR) > 0.6 V, error
I() = 1 mA, error
1
20
mA
mV
Saturation Voltage lo at NERR
600
Laser Driver LDK, CI, IMON
401
Vs(LDK)lo Saturation Voltage lo at LDK
I(LDK) = 300 mA, RSI = 680 Ω, VDD=4.5...5.5 V
I(LDK) = 100 mA, RSI = 680 Ω VDD=4.5...5.5 V
I(LDK) = 60 mA, RSI = 2.5 kΩ VDD=3...3.5 V
1.6
1.2
0.8
2.9
2
1.3
V
V
V
402 Idc(LDK)
403 Vo()
Permissible DC Current in LDK
Permissible Voltage at LDK
Required Capacitor at CI
Charge Current from CI
300
12
mA
V
404 C(CI)
0
10
0
nF
405
|I(CI)|
iC active, REGE = hi, V(CI) = 1 V, CID = 0 V
iC active, REGE = hi, V(CI) = 1 V, CID = VDD
µA
µA
20
65
406 Ipd(CI)
407 Imon()
Pull-Down Current in CI
Current at IMON
iC active, REGE = lo, CID = hi, V(CI) = 1 V,
VDD = 3...5.5 V
0.3
2.6
µA
V(IMON) = VDD − 0.5 V, I(LDK) < 300 mA,
1/280
1/200 I(LDK)
VDD = 4.5...5.5 V
408 Imin(LDK) Minimum permissible current
pulse
0.5
mA
409
Imax(LDK) Maximum obtainable current from
the driver
V(REGE) = V(TTL) = V(EP) = VDD,
V(MD) = 0 V;
VDD = 4.5...5.5 V
VDD = 3...4.5 V
300
90
mA
mA
Timing
501 twu
Time to Wakeup:
CLDA = 1 µF, RSI = 680 Ω
300
µs
NSLP lo → hi to system enable
502 tr
503 tf
504 tp
Laser Current Rise Time
VDD = 5 V see Fig. 2
VDD = 5 V see Fig. 2
VDD = 5 V
1.5
1.5
10
ns
ns
ns
Laser Current Fall Time
Propagation Delay
V(EPx, ENx) → I(LDKx)